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Transistors

Integra IGT5259L50 GaN/SiC Transistor
Integra IGT5259L50 GaN/SiC Transistor

Fully-Matched IGT5259L50 GaN/SiC Transistor Offers 50W at 5-6 GHz

Integra has announced a fully-matched, GaN/SiC transistor IGT5259L50 which offers 50W at 5-6 GHz and is designed for pulsed C-Band Radar applications.
Ampleon's LDMOS Amplifiers
Ampleon's LDMOS Amplifiers

New BLP15M9Sxxx and BLP15H9Sxxx LDMOS Amplifiers for Broadcast, Industrial, Scientific and Medical Applications

Ampleon has announced two new wideband amplifier series: the 32V-rated BLP15M9Sxxx and the 50V-rated BLP15H9Sxxx devices. Both BLP15M9Sxxx and BLP15H9Sxxx are based on 9th generation LDMOS and high-voltage LDMOS technologies respectively, and support frequencies of up t
EPC7014 GaN FET
EPC7014 High Switching Frequency Rad-Hard GaN Transistors

High Switching Frequency Rad-Hard GaN Transistors for Power Conversion Solution in Critical Spaceborne Applications

Efficient Power Conversion (EPC) has added EPC7014, a 60 V, 340 mΩ, 4 APulsed, rad-hard eGaN FET to a new family of radiation-hardened gallium nitride transistors and integrated circuits.
GS-065-00-5-B-A E-Mode GaN Transistor
GS-065-00-5-B-A E-Mode GaN Transistor

GS-065-00-5-B-A: Compact Automotive Grade 650V GaN E-mode Transistor for Demanding High Power Applications

GaN System has expanded its family of automotive-grade 650V transistors with the introduction of GS-065-00-5-B-A, a 60A bottom side cooled transistor.
GAN041-650WSB GaN FETs
GAN041-650WSB GaN FETs

650 V GaN FETs for Reducing Form Factor and Minimizing System Costs in 80 PLUS Titanium-Class Industrial Power Supplies

Nexperia has introduced its second-generation 650V power GaN FET device family with RDS(on) performance down to 35 mΩ (typical).
BC547 Transistor
BC547 Transistor

BC547 Transistor

BC547 is a NPN transistor hence the collector and emitter will be left open (Reverse biased) when the base pin is held at ground and will be closed (Forward biased) when a signal is provided to base pin.  
MasterGaN2- Optimized Asymmetric GaN Transistors
MasterGaN2- Optimized Asymmetric GaN Transistors

MasterGaN2- Optimized Asymmetric GaN Transistors for Soft-Switching and Active-Rectification Converter Topologies

The MasterGaN2 from STMicroelectronics has been designed with two asymmetric gallium-nitride(GaN) transistors for delivering an integrated GaN solution suited to soft-switching and active-rectification
TIP122 Transistor
TIP122 Transistor

TIP122 - Darlington NPN Transistor

TIP122 Transistor Pinout Configuration Pin Number Pin Name Description 1
2SC828 NPN Amplifier Transistor
2SC828 NPN Amplifier Transistor

2SC828 - NPN Amplifier Transistor

2SC828 is an NPN, Silicon-based AF Amplifier Transistor that is mainly used in AF based audio equipment for amplification and switching. It has a Collector-Emitter Voltage of 45 Vdc with a Collector-Base voltage of 45 Vdc.
2N5457 General Purpose N-Channel JFET
2N5457 General Purpose N-Channel JFET

2N5457 General Purpose N-Channel JFET

2N5457 is an N-Channel Depletion layer Junction Field Effect Transistor. This JFET is an N- Channel - Depletion layer JFET that is widely used in audio equipment for amplification, tone modulation, and other purposes.