Toshiba
High-Power SiC MOSFET Dual Modules with Built-in NTC Thermistor designed for Renewable Energy Power Generation Systems
Toshiba Electronic Devices & Storage Corporation has introduced two new SiC MOSFET dual modules that have mounting compatibility with widely used silicon (Si) IGBT modules and their low energy loss characteristics meet needs for higher efficiency and size reductions
TCR5RG: Compact LDO Regulators for Stable Power Line Output in Smartphone and Wearable Devices
The newly launched TCR5RG series from Toshiba Electronic Devices & Storage Corporation is a group of 45 LDO regulators all housed in a thin, compact WCSP4F package.
1200V Silicon Carbide (SiC) MOSFET Offers High Voltage Resistance, High-Speed Switching, and Low On-Resistance for Industrial Applications
Toshiba has come up with a 1200V silicon carbide (SiC) MOSFET, TW070J120B for high voltage resistance, high-speed switching, and low On-resistance operation in industrial applications.
GT20N135SRA - Discrete 1350V N-Channel IGBT for Voltage Resonance Circuits
Toshiba has launched its new IC – GT20N135SRA, a 1350V discrete IGBT to be used in voltage resonance circuits in tabletop IH cookers, microwave ovens, and other home appliances.
TB67B000AHG- Sine wave PWM Driver IC for Three Phase Brushless Motors
Toshiba Electronic Devices & Storage Corporation have announced the launch of “TB67B000AHG” a new three-phase brushless motor driver IC.