SiC MOSFET
New TO-Leadless Packaged Silicon Carbide MOSFET with Low Output Capacitance and 30% Savings in PCB Area
onsemi has announced the new TO-Leadless (TOLL) packaged silicon carbide (SiC) MOSFET that addresses the rapidly growing need for high-performance switching devices which are suitable for designs with high levels of power density.
High-Power SiC MOSFET Dual Modules with Built-in NTC Thermistor designed for Renewable Energy Power Generation Systems
Toshiba Electronic Devices & Storage Corporation has introduced two new SiC MOSFET dual modules that have mounting compatibility with widely used silicon (Si) IGBT modules and their low energy loss characteristics meet needs for higher efficiency and size reductions
AgileSwitch Digital Gate Driver with Augmented Switching Technology for Silicon Carbide MOSFETs
Microchip Technology Inc. has announced a new 1200V production-ready digital gate driver to complement its broad portfolio of silicon carbide MOSFET discrete and module products.
New Gen 4 SiC FETs Provide Circuit Robustness and Enable New Levels of Design Flexibility
UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.