MOSFET

The N-channel high power MOSFETs (Metal–Oxide–Semiconductor Field-Effect Transistor) are popular for driving higher voltages and currents from a microcontroller.

ROHM Semiconductor has introduced its 6th generation Nch+Pch MOSFETs that deliver the ±40V/±60V withstand voltage required for 24V input and are ideal for driving motors in base stations (cooling fans) and industrial applications such as factory automation equipment.

STMicroelectronics has introduced a new super-junction 800V STPOWER MDmesh K6 series that enhances several key parameters to

STMicroelectronics has introduced a single-channel gate driver STGAP2SiCSN which comes in a space-saving narrow-body SO-8 package and is opt

The IRFP460 is an N-channel power MOSFET from Vishay, designed to provide the best combination of low on-resistance and fast switching. This is a high voltage device with a drain-source breakdown of 500V that comes in a TO-247 package. 

Microchip Technology Inc. has announced a new 1200V production-ready digital gate driver to complement its broad portfolio of silicon carbide MOSFET discrete and module products.

The P55NF06 is an N-channel MOSFET with a high drain current of 50A and a low Rds value of 18 mΩ. It also has a VGS of 20V at which the MOSFET will start conducting. Hence it is commonly used to drive applications.

UnitedSiC has announced new 6mohm, 750V Gen 4 SiC FETs that provide a robust short-circuit and features an RDS(on) value of less than half the nearest SiC MOSFET competitor.

Littelfuse, Inc. has announced the high-voltage optically-isolated MOSFET gate that requires no external power supply and can provide fast load turn-on speeds in the order of tens of microseconds.

IRF530 is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A.