FDV301N is semiconductor device called MOSFET (Metal Oxide Semiconductor Field Effect Transistor) and is used as a high speed switching device in applications.
IRF1010E is an n-channel enhancement MOSFET designed for high speed switching applications. It also has low turn ON resistance. Like any other MOSFET the IRF1010E is voltage controlled device and MOSFET state is decided by GATE voltage.
2N7000 MOSFET Pinout Configuration:
Pin Number
Pin Name
Description
1
Source
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