IRFP460 N-Channel Power MOSFET

The IRFP460 is an N-channel power MOSFET from Vishay, designed to provide the best combination of low on-resistance and fast switching. This is a high voltage device with a drain-source breakdown of 500V that comes in a TO-247 package. 

 

IRFP460 MOSFET Pinout Configuration

Pin Number	Pin Name	Pin Description
1	Gate	The gate terminal controls conduction between the drain and source
2	Drain	Current ‘input’, current flows into the MOSFET though this terminal
3	Source	Current ‘output’, usually connected to ground and current flows out of this terminal, gate voltage applied with respect to this terminal

 

Features and Specifications

• N-channel power MOSFET

• Drain-source breakdown voltage: 500V

• Continuous drain current: 20A

• Input capacitance: 4.2nF

• Gate threshold: 2V to 4V

• Available in TO-247 package

 

Note: Complete technical details can be found in the IRFP460 datasheet given at the end of this page. 

 

IRFP460 Equivalent MOSFETs

IRF3205, IRF250, IRF840

 

General Description of IRFP460 MOSFET

The IRFP460 is an N-channel MOSFET manufactured by Vishay. It is designed to have a high breakdown voltage of 500V and a low on-resistance of 0.27Ω at 10V gate voltage. Given the high breakdown voltage, this MOSFET can be used in switching converters with mains voltage input, high voltage amplifiers, and motor drivers. 

 

How To Use IRFP460 MOSFET

The MOSFET is a voltage-controlled device, meaning that a voltage must be present at the gate (with respect to the source) for it to turn on. In this case, the IRFP460 has a gate threshold voltage between 2V and 4V, and it just barely starts conducting at this voltage. To achieve the specified-on resistance of 0.27Ω, the gate voltage must be at least 10V. The maximum limit of the gate voltage is ±20V, beyond which the gate can be damaged.

Power MOSFETs like the IRFP460 are usually used in the low-side switching configuration. In the interactive simulation linked below, the MOSFET is used to switch an inductive load at a frequency of 10kHz. The diode across the inductor prevents the voltage spikes from damaging the MOSFET. The 10K pulldown resistor makes sure that the MOSFET is off by default and does not turn on accidentally. 

 

Simulation Circuit

https://tinyurl.com/ygpqlo7r

 

Applications 

• DC-DC converters

• Motor drivers

• Power amplifiers

• Power switching

 

2D Model and Dimensions

If you are designing a PCB or Perf board with this component then the following picture from the Datasheet will be useful to know its package type and dimensions.