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High Performance 750V SiC FET Portfolio with Low RDS Designed for Onboard Chargers and IT Power Supplies

750V SiC FET Portfolio
750V SiC FET Portfolio

Qorvo has announced seven 750V silicon carbide (SiC) FETs in surface mount D2PAK-7L package that are tailored for the rapidly growing applications of onboard chargers, soft-switched DC/DC converters, battery charging (fast DC and industrial), and IT/server power supplies. These devices deliver an optimal solution for high-power applications that require maximum efficiency, low conduction losses, and excellent cost-effectiveness in a thermally enhanced package. Highlighted by the low RDS(on) of 9 milliohms (mohms) at 650/750V, the Gen 4 UJ4C/SC series is rated at 9, 11, 18, 23, 33, 44, and 60 mohms.


Leveraging a unique cascode SiC FET technology in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET, these devices deliver a best-in-class RDS x A figure of merit, resulting in the lowest conduction losses in a small die.



  • 750V

  • Low RDS(on) from 6mΩ to 60mΩ

  • Industry's best Figures of Merit (FoM)

  • 5µs short-circuit withstand time @ 6mΩ

  • Excellent reverse recovery

  • Low body diode, gate charge, and intrinsic capacitance

  • ESD protected, HBM class 2

  • Industry standard TO-247-3L, TO-247-4L, and D2PAK-7L packaging



  • Onboard chargers

  • Soft-switched DC/DC converters

  • Battery charging

  • IT/server power supplies


Availability and Pricing

All these devices are available now. Pricing (1000-up, FOB USA) for the new 750V Gen 4 SiC FETs in the D2PAK-7L package ranges from $3.50 for the UJ4C075060B7S to $18.92 for the UJ4SC075009B7S.

Component Datasheet

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