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HEMT

Integra IGT5259L50 GaN/SiC Transistor
Integra IGT5259L50 GaN/SiC Transistor

Fully-Matched IGT5259L50 GaN/SiC Transistor Offers 50W at 5-6 GHz

Integra has announced a fully-matched, GaN/SiC transistor IGT5259L50 which offers 50W at 5-6 GHz and is designed for pulsed C-Band Radar applications.
150V GaN HEMT Devices
150V GaN HEMT Devices

150V GaN HEMT Devices with 8V Gate Breakdown Voltage for Power Supply Circuits in Industrial and Communication Equipment

ROHM has introduced the highest (8V) gate breakdown voltage (rated gate-source voltage) technology for 150V GaN HEMT devices optimized for power supply circuits in industrial and communication equipment.
CoolGaN 600V e-mode HEMT
CoolGaN 600V e-mode HEMT

CoolGaN 600V e-mode HEMT for Better Efficiency and Reliability in Telecom Power Applications

Infineon technologies have provided CoolGaN to deliver ultimate efficiency and reliability to telecom power supply systems. Available in the DFN8x8 package, the CoolGan 600V e-mode HEMT in the Delta’s DPR