GMICP2731-10 GaN MMIC Power Amplifier for High RF Output and Signal Quality in Satellite Communications
Microchip Technology has introduced the new GMICP2731-10 Ka-band MMIC (Monolithic Microwave Integrated Circuit) power amplifier that is fabricated based on GaN-on-Silicon Carbide (SiC) technology. The new GaN MMIC delivers high RF output and ensures the signal characteristics retention at the same time. This helps in achieving fast data rates required for delivering video and broadband data.
This first-generation GaN MMIC from the company can deliver up to 10W of saturated RF output power across the 3.5 GHz of bandwidth between 27.5 to 31 GHz, hence can be used in commercial and defense satellite communications, 5G networks, and other aerospace and defense systems. The device comes with a power-added efficiency of 20% and 22dB of small-signal gain and 15 dB of return loss.
The balanced architecture of the MMIC allows it to be matched to 50-ohms and includes integrated DC blocking capacitors at the output to simplify design integration. When the device is used along with solid-state power amplifiers (SSPAs), it can achieve greater than 30% lower power and weight compared to its GaAs counterparts.
Features of GMICP2731-10 GaN MMIC
- Frequency range: 27.5-31GHz
- Pout: 39dBm (PIN = 24dBm)
- PAE: 22% (PIN = 24dBm)
- Small Signal Gain: 22dB (28GHz)
- Return Loss: 15dB
- Drain Bias 24V, IDQ=112-224mA
- Technology: 0.15μm GaN on SiC
Note: More technical information can be found on the GMICP2731-10 GaN MMIC Power Amplifier product page.
