GaN

Nexperia released a new series of AC/DC flyback controllers, the NEX806/8xx and NEX8180x models.

Texas Instruments has introduced the new 650V three-phase GaN IPM for 250W motor drive applications.

ROHM has introduced the BM3G0xxMUV-LB series, a line of power stage ICs, integrating 650V Gallium Nitride High Electron Mobility Transi

ROHM has announced the mass production of two new Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs), the GNP1070TC-Z and GNP1150TCA-Z.

STMicroelectronics, one of the global leaders in semiconductor manufacturing has recently launched two new power converters, the ViperGaN65 and

RECOM has expanded its range of low-cost, unregulated DC/DC converters with the new RA3 series of 3W SMD parts that are designed to provi

Microchip Technology Inc.

Integra has announced a fully-matched, GaN/SiC transistor IGT5259L50 which offers 50W at 5-6 GHz and is designed for pulsed C-Band Radar applications.

Microchip Technology has introduced the new GMICP2731-10 Ka-band MMIC (Monolithic Microwave Integrated Circuit) power amplifier that is fabricated based on GaN-on-Silicon Carbide (SiC) technology.

Fairview Microwave has released the new high-power broadband RF and microwave PIN diode series that utilizes GaN semiconductor technology for ensuring state-of-the-art power performance with an excellent power-to-volume ratio.