Compact N-Channel MOSFETs in PowerPAK 8x8L Package feature Bond Wireless Construction and Gullwing Leads for Increased Board-Level Reliability

Vishay Intertechnology has introduced the new 60V SiJH600E and 80V SiJH800E n-channel TrenchFET MOSFETs that combine ultra-low on-resistance with high-temperature operation to +175°C and increase power density, efficiency, and board-level reliability in telecom and industrial applications. These MOSFETs feature high continuous drain current handling and their space-saving PowerPAK 8x8L package promotes board-level reliability with its bond wireless construction and gullwing leads for mechanical stress relief.

These devices provide ruggedness and reliability for synchronous rectification in power supplies, motor drive control, battery management, and power tool applications. For increased power density, the SiJH600E and SiJH800E MOSFETs deliver a continuous drain current of 373A and 288A and ultra-low on-resistance of 0.65mΩ and 1.22mΩ typical at 10V, respectively.

Features

• TrenchFET Gen IV power MOSFET

• Fully lead (Pb)-free device

• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces switching related power loss

• 50% smaller footprint than D2PAK (TO-263)

• 100% Rg and UIS tested

Applications

• Synchronous rectification

• OR-ing

• Motor drive control

• Battery management

• Power supply